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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCX70GLT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc
BCX70GLT1 BCX70JLT1 BCX70KLT1
3 1 2
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous
CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter - Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR- 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES -- -- IEBO -- 20 20 20 nAdc 45 5.0 -- -- Vdc Vdc
mAdc
nAdc
0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996
1
BCX70GLT1 BCX70JLT1 BCX70KLT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K VCE(sat) -- -- VBE(sat) 0.7 0.6 VBE(on) 0.55 1.05 0.85 0.75 Vdc 0.55 0.35 Vdc -- 40 100 120 250 380 60 90 100 -- -- -- 220 460 630 -- -- -- Vdc --
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
Collector - Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base - Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base - Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL- SIGNAL CHARACTERISTICS
Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Small - Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) BCX70G BCX70J BCX70K NF fT Cobo hfe 125 250 350 -- 250 500 700 6.0 dB 125 -- -- 4.5 MHz pF --
Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn-On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) Turn-Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990) ton toff -- -- 150 800 ns ns
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% - 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* - 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275
10 < t1 < 500 s DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
BCX70GLT1 BCX70JLT1 BCX70KLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS
10 7.0 5.0 10 A 3.0
100 A
30 A
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as: NF
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
IC, COLLECTOR CURRENT (A)
Figure 7. Wideband Motorola Small-Signal Transistors, FETs and Diodes Device Data 3
BCX70GLT1 BCX70JLT1 BCX70KLT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C
h FE, DC CURRENT GAIN
200
25C
- 55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0%
IB = 500 A 400 A 300 A
0.6
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/C)
1.4
1.6 0.8
*APPLIES for IC/IB hFE/2 25C to 125C
0
*qVC for VCE(sat) - 55C to 25C
- 0.8 25C to 125C - 1.6
qVB for VBE
- 2.4 0.1 0.2
- 55C to 25C 50 100
0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
Figure 11. "On" Voltages
Figure 12. Temperature Coefficients
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
BCX70GLT1 BCX70JLT1 BCX70KLT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)
50 70
100
Figure 13. Turn-On Time
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 14. Turn-Off Time
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Current-Gain -- Bandwidth Product
Figure 16. Capacitance
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA
Figure 17. Input Impedance
Figure 18. Output Admittance
Motorola Small-Signal Transistors, FETs and Diodes Device Data
5
BCX70GLT1 BCX70JLT1 BCX70KLT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
Figure 19. Thermal Response
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find Z JA(t), multiply the value obtained from Figure 19 by the steady state value RJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569.
-4 0
-2 0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C)
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon T J(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 20.
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
BCX70GLT1 BCX70JLT1 BCX70KLT1
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
Motorola Small-Signal Transistors, FETs and Diodes Device Data
7
BCX70GLT1 BCX70JLT1 BCX70KLT1
PACKAGE DIMENSIONS
A L
3
BS
1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60
V
G
C D H K J
DIM A B C D G H J K L S V
CASE 318-08 ISSUE AE SOT-23 (TO-236AB)
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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Motorola Small-Signal Transistors, FETs and Diodes Device Data BCX70GLT1/D
*BCX70GLT1/D*

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